Dr. Martin Albrecht
Leibniz-Institute for Crystal Growth, Berlin, Germany
Title to be confirmed
Prof. Liubov Belova
Royal Institute of Technology, Stockholm, Sweden
Title to be confirmed
Prof. Fabio Biscarini,
Life Science Dept. – University of Modena and Reggio Emilia, Modena, Italy
Neuromorphic organic devices that specifically discriminate dopamine from its metabolites by non-specific interactions
Prof. Colombo Bolognesi,
ETH Zürich, Switzerland
Design Trade-Offs in High-Speed Low-Noise InP HEMTs
Prof. Irina Boyanova,
Linkoping University, Sweden
III-V nanowires from highly-mismatched alloys
Prof. Federico Capasso,
Harvard University, USA
From Quantum Cascade Lasers to compact widely tunable room temperature Terahertz Molecular Lasers
Prof. Jérôme Faist,
Institute for quantum electronics, ETH Zurich
Title to be confirmed
Prof. Jung Han
Yale University, USA
Porous GaN and its applications
Prof. Wei Huang
Northwestern Polytechnical University (NPU), Nanjing Tech University and Nanjing University of Posts & Telecommunications, China
Title to be confirmed
Dr. Linda Höglund,
IRnova AB, Sweden
T2SL and QWIP infrared detectors for gas sensing applications
Dr. Hideaki Matsuzaki,
NTT Device Technology Laboratories, NTT Corporation
Scaling-down and integration technologies of InP-based transistors toward sub-millimeter and THz band application
Dr. Wondwosen Metaferia,
National Renewable Energy Laboratory, USA
Dynamic HVPE and its application for Photovoltaics
Dr. Linda Mondin,
European Space Agency (ESA)
Laser Interferometer Space Antenna
Stefan Moench
Fraunhofer Institute for Applied Solid State Physics IAF, Germany
Integration of GaN-on-Si power converter topologies, circuits and sensors
Dr. Daniel Neumaier
AMO GmbH, Aachen, Germany
Title to be confirmed
Dr. Shouleh Nikzad,
NASA Jet Propulsion Laboratory
Nanoscale Engineered Silicon Imagers Reaching Theoretical Limit Performance and their Application in Space Exploration and Synergistic Fields
Prof. Tomas Palacios
Massachusetts Institute of Technology, USA
Vertical GaN-on-Si Power Devices… Where is the limit?
Dr. Ani Khachatrian,
USA Naval research Lab
Single Event Effects in wide bandgap semiconductors
Prof. Martin Kuball
University of Bristol, UK
Thermal management of electronics – GaN and Gallium Oxide
Christian Kuhn
Technische Universität Berlin (TU Berlin), Germany
MOVPE growth of AlGaN-based deep UV LEDs with tunnel heterojunctions
Dr. Bernardette Kunert
imec, Belgium
III/V Nano-Ridge Engineering for Device Integration on 300 mm Silicon
Dr. Maki Kushimoto
Mie University, Japan
High-quality AlN template prepared by face-to-face annealing of sputtered AlN on sapphire
Dr. Hideto Miyake
Nagoya University, Japan
Polarization doping and current injection in UVC lasers and UV LEDs
Prof. Muhammad Nawaz
ABB Corporate Research, Sweden
Wide bandgap device technology overview and application aspects in high power electronics
Dr. Juris Purans
Institute of Solid State Physics, Riga, Latvia
Title to be confirmed
Prof. Siddharth Rajan
Ohia State University, USA
Heterostructure and Electrostatic Engineering for Gallium Oxide Electronic Devices
Prof. Niklas Rorsman
Chalmers University of Technology, Sweden
Title to be confirmed
Prof. Lars Samuelson
Lund University, Sweden
Relaxed and dislocation-free InGaN platelets as ideal templates for red-emitting LEDs for the realization of all-nitride microLED displays
Dr. Bei Shi
University of California, Santa Barbara (UCSB), USA
1550 nm lasers epitaxially grown on silicon
Prof. Jim Speck
University of California, Santa Barbara (UCSB), USA
Title to be confirmed
Prof. Takashi Egawa
Nagoya Institute of Technology, Japan
GaN-on-Si Epitaxial Growth for High Power Device Applications
Prof. Ben Zhong Tang
The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, China
Optoelectronic Systems Based on AIE Materials
Dr. Valdimir Tassev
US Air Force Research Laboratory, USA
Heteroepitaxy of Binary and Ternary Semiconductors on GaAs Substrates and OP–GaAs Templates for Nonlinear Optical Applications
Prof. Jawad Ul-Hasan
Linköping University, Sweden
Title to be confirmed
Prof. Lasse Vines
University of Oslo, Norway
Electrically Active Defects in β-Ga2O3
Dr. Kristijonas Vizbaras
Brolis Sensor Technology, Vilnius, Lithuania
Paving the Way Towards Optical Sensing Revolution: Integrated Hybrid GaSb/SOI Ultra-Widely Swept Laser-based Sensors for Health and Wellness Applications
Prof. Qin Wang,
Research Institutes of Sweden and the Royal Institute of Technology, Stockholm, Sweden
SiC based high-temperature/pressure sensors operating in harsh environment
Prof. Lars-Erik Wernersson
Lund University, Sweden
III-V Nanowire MOSFETs on Si Substrates
Prof. Grace Xing
Cornell University, USA
How to achieve 1 GW/cm2 Ga2O3 transistors
Prof. Hongqi Xu
Peking University, China
Toward building topological superconducting systems using semiconductor nanostructures
Prof. Weidong Zhou
University of Texas at Arlington, USA
Scaling of Photonic Crystal Lasers for Energy Efficient 3D Integrated Photonics on Silicon
Prof. Val Zwiller
Royal Institute of Technology, Stockholm, Sweden
Quantum hardware for quantum communication