National Institute of Information and Communications Technology, Japan
Abstract: Recently, gallium oxide (Ga2O3) has been getting much attention as a promising new compound semiconductor due to its excellent physical properties based on an extremely large bandgap of over 4.5 eV and the availability of large-size, high-quality, affordable single-crystal wafers produced from melt-grown bulk crystals. Much of the world-wide research and development has been motivated by the attractive material properties, and significant progress in all the aspects of Ga2O3 material and device technologies has been made over the past ten years. In fact, several milestones on the way to industrialization and commercialization of Ga2O3 power and RF devices have already been achieved. However, there is no room for doubt that the current device technologies are still immature, and that we still have a long way to introduce Ga2O3 transistors and diodes to practical markets.
In this talk, after an introduction of basic material properties of Ga2O3, I will provide a broad overview of the state-of-the-art Ga2O3 epitaxial growth and electronic device technologies. In addition, a brief outlook on Ga2O3 device applications will be given.
Biography: Masataka Higashiwaki received the B.S., M.S., and Ph.D. degrees in solid-state physics from Osaka University, Japan, in 1994, 1996, and 1998, respectively. After a two-year postdoctoral fellow, in 2000, he joined the Communications Research Laboratory (CRL), Japan. From 2007 to 2010, he took a temporary leave from the National Institute of Information and Communications Technology (NICT), which was renamed from CRL, and joined the Department of Electrical and Computer Engineering, University of California, Santa Barbara as a Project Scientist. He returned to NICT in 2010 and started a pioneering work on Ga2O3-based electronics. He is now a Director at Green ICT Device Advanced Development Center. Higashiwaki is a recipient of several awards, including the 2014 Japan Society for the Promotion of Science (JSPS) Prize and the 2007 International Symposium on Compound Semiconductors (ISCS) Young Scientist Award. His current research interest is in Ga2O3 device and material engineering.